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| ■論文No. |
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| ■ページ数 |
5ページ |
■発行日
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2023/10/02 |
| ■タイトル |
Formation of Periodic Surface Structures on Semiconductors under Mid-Infrared Free-Electron Laser Irradiation |
| ■タイトル(英語) |
Formation of Periodic Surface Structures on Semiconductors under Mid-Infrared Free-Electron Laser Irradiation |
| ■著者名 |
Shin-ichiro Masuno (Advanced Research Center for Beam Science, Institute for Chemical Research, Kyoto University), Masaki Hashida (Advanced Research Center for Beam Science, Institute for Chemical Research, Kyoto University/Research Institute of Science and Technology, Tokai University), Heishun Zen (Institute of Advanced Energy, Kyoto University) |
| ■著者名(英語) |
Shin-ichiro Masuno (Advanced Research Center for Beam Science, Institute for Chemical Research, Kyoto University), Masaki Hashida (Advanced Research Center for Beam Science, Institute for Chemical Research, Kyoto University/Research Institute of Science and Technology, Tokai University), Heishun Zen (Institute of Advanced Energy, Kyoto University) |
| ■価格 |
会員 ¥550 一般 ¥770 |
| ■書籍種類 |
論文誌(論文単位) |
| ■グループ名 |
【A】基礎・材料・共通部門 |
| ■本誌 |
電気学会論文誌A（基礎・材料・共通部門誌） Vol.143 No.10 （2023） 特集：未来社会に向けた先端光応用・視覚技術II
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| ■本誌掲載ページ |
320-324ページ |
| ■原稿種別 |
論文／英語 |
| ■電子版へのリンク |
https://www.jstage.jst.go.jp/article/ieejfms/143/10/143_320/_article/-char/ja/
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| ■キーワード |
laser-induced periodic surface structures，laser ablation，mid-infrared laser，free-electron laser |
| ■要約(日本語) |
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| ■要約(英語) |
In understanding the formation mechanism of laser-induced periodic surface structures (LIPSS), the dependence of the LIPSS formation threshold fluence F// on the material properties is crucial. In this work, the LIPSS generated upon the irradiation of various semiconductor materials with a train of 11.4 μm femtosecond laser pulses were examined. The laser source was a Mid-infrared free-electron laser (MIR-FEL). Eight semiconductor substrates (i.e., Si, Ge, ZnO, SiC-4H, GaP, GaN, CdTe, and SiO2) were used as the targets. On Si, Ge, SiC-4H, and GaN, the LIPSS were oriented parallel to the MIR-FEL polarization with interspaces of 1/8 to 1/4 of the MIR-FEL wavelength λFEL. These interspaces tended to match the wavelength of the second harmonic of the MIR-FEL light propagating in the substrates. The obtained F// were relatively correlated with the bandgap energies of materials, as were those for near-infrared femtosecond lasers. Another type of LIPSS oriented perpendicular to the MIR-FEL polarization with interspaces of λFEL to λFEL/9 was also observed in the same spot on SiC-4H or GaN at higher fluences than only //-LIPSS was formed. |
| ■版 型 |
A4 |
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